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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER NP34N055HHE NP34N055IHE PACKAGE TO-251 TO-252
DESCRIPTION
These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
* Channel temperature 175 degree rated * Super low on-state resistance RDS(on) = 19 m MAX. (VGS = 10 V, ID = 17 A) * Low Ciss : Ciss = 1600 pF TYP. * Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
(TO-251) 55 20 34 136 1.2 88 34 / 27 / 10 11 / 72 / 100 175 -55 to + 175 V V A A W W A mJ C C (TO-252)
VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg
Total Power Dissipation (TA = 25 C) Total Power Dissipation (TC = 25 C) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty cycle 1 %
Note2 Note2
2. Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.70 125 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14153EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999,2000
NP34N055HHE, NP34N055IHE
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Threshold Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(th) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 17 A VDS = VGS, ID = 250 A VDS = 10 V, ID = 17 A VDS = 55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 25 V VGS = 0 V f = 1 MHz ID = 17 A VGS(on) = 10 V VDD = 28 V RG = 1 ID = 34 A VDD = 44 V VGS = 10 V IF = 34 A, VGS = 0 V IF = 34 A, VGS = 0 V di/dt = 100 A/s 1600 250 120 21 15 35 12 30 9 12 1.0 40 58 2.0 6 MIN. TYP. 15 3.0 12 10 10 2400 380 220 47 38 70 29 45 MAX. 19 4.0 UNIT m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90 % 90 % 10 % 10 %
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D14153EJ3V0DS
NP34N055HHE, NP34N055IHE
TYPICAL CHARACTERISTICS (TA = 25C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
100 80 60 40 20 0
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
0
25
50
75
100 125 150 175 200
TC - Case Temperature - C
TC - Case Temperature - C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 120
EAS- Single Avalanche Energy - mJ
5
Figure3. FORWARD BIAS SAFE OPERATING AREA 1000
100 80 60 40 20
100 mJ 72 mJ IAS = 10 A 27 A 34 A
ID(pulse)
ID - Drain Current - A
100
PW
10 0 s
d ite im 0 V) )L (on =1 DS S R VG (at
ID(DC)
10
Po Lim we ite r Di d ss ipa tio n
DC
1m s
=1 0 s
1 TC = 25C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V
11 mJ 50 75 100 125 150 175
0.1 0.1
0 25
Starting Tch - Starting Channel Temperature - C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
1000 Rth(ch-A) = 125 C/W
100
10 Rth(ch-C) = 1.70 C/W
1
0.1 Single Pulse TC = 25C 100 1m 10 m 100 m 1 10 100 1000
0.01 10
PW - Pulse Width - s
Data Sheet D14153EJ3V0DS
3
NP34N055HHE, NP34N055IHE
Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200
ID - Drain Current - A
ID - Drain Current - A
10 TA = 175C 150C 75C 25C -55C
160 120 80 40 VGS =10 V
1
0.1
0.01
1
2
3
4
5
6
0
0
2
4
6
8
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
| yfs | - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS=10V Pulsed 10 TA = 175C 75C 25C -55C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed 35 30 25 20 15 10 5 0 0 5 10 15 20 ID = 17 A
1
0.1
0.01 0.01
0.1
1
10
100
ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed
VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = VGS ID = 250 A
RDS(on) - Drain to Source On-state Resistance - m
VGS(th) - Gate to Source Threshold Voltage - V
20 VGS = 10 V
3.0
2.0
10
1.0
0
1
10
100
1000
0
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14153EJ3V0DS
NP34N055HHE, NP34N055IHE
RDS(on) - Drain to Source On-state Resistance - m
35 30 25 20 15 10 5 ID = 17 A 0 -50 0 50 100 150 VGS = 10 V
ISD - Diode Forward Current - A
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 45 Pulsed 40
Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
100 VGS = 10 V 10 VGS = 0 V
1
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VSD - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
1000
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz Ciss
tf 100 td(off) td(on) 10 tr
1000
Coss 100 Crss
10 0.1
1
10
100
1 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
di/dt = 100 A/s VGS = 0 V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80
VDS - Drain to Source Voltage - V
16 14 12 VDD = 44 V 28 V 11 V 10 VGS 8 6 4 VDS 2 ID = 34 A 0 4 8 12 16 20 24 28 32 0
VGS - Gate to Source Voltage - V
70 60 50 40 30 20 10 0
100
10
1 0.1
1
10
100
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D14153EJ3V0DS
5
NP34N055HHE, NP34N055IHE
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
6.50.2 5.00.2
1.5+0.2 -0.1
2)TO-252 (MP-3Z)
2.30.2
0.50.1
6.50.2 5.00.2
1.5+0.2 -0.1
2.30.2 0.50.1
1.60.2
5.50.2
13.7 MIN.
4.3 MAX.
0.8 TYP.
0.5+0.2 -0.1 2.3 TYP. 2.3 TYP.
0.75 TYP.
0.5+0.2 -0.1
2.3 TYP.
2.3 TYP.
0.8 TYP.
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D14153EJ3V0DS
0.7 TYP.
1.10.2
2.0 MIN.
1.10.2
7.0 MIN.
0.9 MAX.
10.0 MAX.
0.8 MAX.
1.0 MIN. 1.8 TYP.
5.50.2
NP34N055HHE, NP34N055IHE
[MEMO]
Data Sheet D14153EJ3V0DS
7
NP34N055HHE, NP34N055IHE
* The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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